SC4: Electromagnetic-Circuit Modeling for Advanced Power Semiconductor Devices

Dr. Ivana Kovacevic-Badstübner, Advanced Power Semiconductor Laboratory, ETH Zurich

With the faster switching capabilities of advanced power semiconductor devices and higher power densities, the electromagnetic aspects of power electronic systems increase in importance and rise the attention towards the system optimization considering the design of interconnections, the placement of components and their mutual couplings. The software tools enabling the simultaneous modeling of semiconductor devices and electromagnetic system behavior have been frequently used in both industry and academia to evaluate and gain a better understanding of the currents and voltage waveforms of power electronic systems. Electromagnetic modeling problems in power electronics applications frequently set the requirements to solve Maxwell’s equations in a wide-frequency range from dc to high frequencies (MHz-GHz) in an accurate and computationally efficient way. The state-of-the-art EM solvers are commonly specialized for either low-frequency (LF) or high-frequency (HF) simulations.

This short course will discuss the modelling capabilities of the state-of-the-art software tools dedicated for LF and HF modeling as ANSYS Q3D Extractor and ANSYS HFSS, respectively, focusing on the characteristics of the numerical solvers being used. Furthermore, the existing ways to export electromagnetic models in circuit simulators will be described in terms of accuracy and computational cost. The modeling capabilities will be demonstrated on the selected examples of the power electronic circuits implementing WBG power semiconductor devices. Finally, promising numerical techniques for power electronics applications allowing virtual prototyping in an efficient and accurate way are going to be reviewed.

The course is intended for all audiences interested in the virtual characterization of advanced power electronics systems implementing WBG power devices.


Dr. Ivana F. Kovacevic-Badstübner received the Dipl.Ing. degree from the Faculty of Electrical Engineering, Department for Electronics, the University of Belgrade, Serbia, in 2006 (with Hons.) and the M.Sc. and Ph.D. degrees in Electrical Engineering and Information Technology from the Swiss Federal Institute of Technology (ETH Zurich), Switzerland, in 2008 and 2012, respectively. From 2008 to 2012, she was a Ph.D. student in the Power Electronic Systems (PES) laboratory at ETH Zurich. From 2012, she continued as Post-Doctoral researcher and further as project scientist in the PES Laboratory working on the lifetime modeling of power semiconductor modules, the multi-domain modeling and optimization of power electronic systems and components, and the prediction of electromagnetic behavior of power electronics circuits based on the developed numerical techniques. In March 2016, she joined the Advanced Power Semiconductor Laboratory at ETH Zurich. Her research interests include novel packaging technologies for SiC devices, the optimization of power module layout with respect to electromagnetic interference, and multi-domain modelling of power semiconductor devices and their modules.