SC1: Silicon IGBTs and Fast Recovery Diodes for High Power Applications
Dr. Munaf Rahimo, MTAL
Silicon based high voltage semiconductor devices continue to play a major role in power electronics conversion, the field of traction, transmission and distribution, renewables and industrial applications. In particular, the Insulated Gate Bipolar Transistor “IGBT” and its companion, the fast recovery diode “FRD” have played a major role for enabling more compact, efficient and reliable systems due to the continuous improvements achieved at both device and package levels with respect to the power handling capability, losses and robustness. This development trend is set to continue for the foreseeable future with more advanced device concepts for matching the performance expectations of future power electronics systems in the high-power range.
The tutorial will begin with a brief introduction and historical background of the different power electronics devices and applications with special focus on the IGBT and FRD. This will be followed with the first main part of the tutorial covering the IGBT and starting with the device basic structure, physics and principle of operation under static, dynamic, safe operating area and fault protection conditions. The different device designs and performance trends with respect to the overall electrical characteristics will be explained while outlining the benefits for the targeted applications. The second part of the tutorial will cover the FRD and the session will be structured similar to that of the previous IGBT session. Furthermore, the final part will cover future IGBT and diode technology trends while outlining the potential impact such advanced components will have on the system level performance. In general, the
tutorial will also attempt to provide an outlook into the future potentials of Silicon IGBT in particular when compared to the recent advances made for MOSFETs and diodes based on Silicon Carbide (SiC).
The tutorial is suitable as a general introduction for beginners into the field of IGBTs and FRDs. Experienced attendants can also benefit since the tutorial covers important design and development trends such as those related to losses, high safe operating area, and improved controllability.
Dr. Rahimo received his BSc in Electrical Engineering in 1990 at the College of Engineering, Baghdad University, Iraq, his M.Sc. in Electrical and Electronic Engineering with distinction in 1993 for his thesis entitled “Power Diode Switching Transients in GTO Circuits” and his Ph.D. in 1996 with the thesis entitled "Switching Characteristics of Fast Power Diodes in IGBT Circuits”, both at the School of Engineering, Staffordshire University, UK. He has a vast experience from 4 different companies, including the position as ABB Power Grids Corporate Executive Engineer; the highest technical corporate position in ABB. In 2018, he founded MTAL GmbH, Switzerland, focusing on consulting and start-up activities in the field of power devices and applications. Dr. Rahimo currently has more than 28 years of accumulated experience in the field of power semiconductor devices and applications with more than 90 patents families to his name, 50 of which have patent grants. He has authored and co-authored over 150 journal/conference papers and has given many international tutorials and workshops. He is a Member of the IoP / Charted Physicists (UK) and IET / Charted Engineer (UK) and Senior member in the IEEE.