Short Course Program

A version in a pdf file available here.

Date: Sunday, May 17, 2020
Venue: Hofburg Forum (Ground Floor, Entrance Heldenplatz)

08:00
Registration

08:30
Welcome

08:40
Silicon IGBTs and Fast Recovery Diodes for High Power Applications

Dr. Munaf Rahimo, MTAL

09:40
Short Break

09:50
SiC Super Junction MOSFETs and SiC-IGBTs – State-of-the-art in High- to Ultra-High-Voltage SiC Power Devices

Dr. Yoshiyuki Yonezawa, AIST

10:50
Coffee Break

11:10
Beyond the Limits of GaN HEMT Technology – Vertical GaN Transistors and Towards AlN Electronics

Dr. Oliver Hilt, Ferdinand-Braun-Institut Berlin

12:10
Lunch Break

13:30
Electromagnetic-Circuit Modeling for Advanced Power Semiconductor Devices

Dr. Ivana Kovacevic-Badstübner, Advanced Power Semiconductor Laboratory, ETH Zurich

14:30
Coffee Break

14:50
GaN Power IC’s: Technology, Dynamic Device Behavior and Design

Prof. Kevin J. Chen, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology

15:50
Short Break

16:00
Power/Energy Electronics Design 4.0

Prof. Johann Kolar, Power Electronic Systems Laboratory, ETH Zurich

17:00
End