Call for Papers

The Technical Program Committee of the 32nd International Symposium on Power Semiconductor Devices and ICs invites you to submit abstracts for oral or poster presentations to the conference (download the call for papers here).

Topics of Interest include but are not limited to:

  • Devices: Device Physics, Device Design, High Frequency Devices, High Power Devices, Smart Power Devices, Safe-Operating Area, Reliability, ESD
  • Materials: Si, SiC, GaN, AlN, Ga2O3, Diamond, GaAs
  • Power ICs: Isolation Techniques, SOI, Circuit Design, Device Technology, Energy Capability and SOA, Reliability, ESD, Power SoC, Monolithic vs. Hybrid
  • Processes: Process Integration, Lifetime Control, Passivation, Crystal Growth, III-V (Hetero)-Epitaxial Growth
  • Modelling/Simulation: Device and Circuit Simulation, Layout, Verification Tools,
  • Packaging: Novel Packaging Concepts, Power SiP, Stress and Thermal Analysis, Thermal Management
  • Applications: Hybrid Vehicles, Power Supplies, Computer and Telecom Power, Motor Drives, Utility

A PDF abstract (template download here) should be submitted including:

  • A single-page text summary in English (500 words maximum)
  • Up to two additional pages of supporting graphs and tables
  • The abstract heading must include: Title, Authors, Affiliations, Address, Phone, Fax, Email
  • The abstract must CLEARLY state: Purpose of work, how the work advances prior art, specific results and their significance, up-to-date references
  • Mark the papers eligibility for the Charitat Award (paper for which the first author is not more than 30 years of age at the time of the conference). To be eligible, the first author must also present the paper.
  • Select the appropriate conference track as listed below

Submission website: (opens September 16, 2019)

Important Dates

  • Abstract submission deadline is NOVEMBER 8, 2019
  • Author notification will be sent out by January 20, 2020
  • Late news submission (full paper, limited acceptance) deadline is February 28, 2020
  • Final manuscripts must be submitted before March 6, 2020

Conference Tracks

  • High Voltage Power Devices & Technology:
    High voltage silicon based discrete devices (>200V) and technology, e.g. super junction MOSFETs, IGBTs, thyristors, GTOs, pn-diodes, …
  • Low Voltage Power Devices and Power IC Technology:
    Low voltage silicon based discrete power devices (≤ 200V) and power devices for power ICs of all voltage ranges incl. technology
  • Power IC Design:
    Circuit design and demonstration using power IC technology platform
  • GaN and III/V Compound Materials:
    Power devices, technology, materials and processing for GaN, AlN, GaAs, …
  • SiC and other Materials:
    Power devices, technology, materials and processing for SiC, Ga2O3, Diamond, …
  • Module and Package Technologies:
    Module and package technology for discrete power devices and power ICs


General Chair:
Dr. Oliver Häberlen, Infineon Technologies, Email:

Technical Program Committee Chair:
Prof. Nando Kaminski, University of Bremen, Email: