Abstract Submission

You are welcome to submit an abstract for an oral or a poster presentation to the ISPSD2020 conference. Please read carefully through and follow the below instructions before you submit your abstract:

  • All abstracts need to be submitted electronically through the submission website
  • Only abstracts in PDF format (template download here) can be accepted
  • It should consist of a single-page text summary in English (500 words maximum) with up to two additional pages of supporting graphs and tables
  • Abstracts exceeding the length of 3 pages will be rejected
  • The minimum allowable font size is 10 point Times New Roman or 11 point Calibri
  • Follow the Abstract Writing Guide (download here)
  • The abstract heading must include: Title, Authors, Affiliations, Address, Phone, Fax, Email
  • The abstract must CLEARLY state: Purpose of work, how the work advances prior art, specific results and their significance, up-to-date references
  • Select the appropriate conference track as listed below
  • Mark the papers eligibility for the Charitat Award (paper for which the first author is not more than 30 years of age at the time of the conference). To be eligible, the first author must also present the paper.
  • In order for a manuscript to be published in the symposium proceedings, it is required that the presenting author register for and attend the symposium to deliver the oral or poster presentation. It is strongly recommended that the paper’s first author be the presenter, although a co-author may serve in this role if the first author is unavailable.

Submission website: www.epapers.org/ispsd2020

Important Dates

  • Abstract submission deadline is NOVEMBER 8, 2019
  • Author notification will be sent out by January 20, 2020
  • Late news submission (full paper, limited acceptance) deadline is February 28, 2020
  • Final manuscripts must be submitted before March 13, 2020

Conference Tracks

  • High Voltage Power Devices & Technology:
    High voltage silicon based discrete devices (>200V) and technology, e.g. super junction MOSFETs, IGBTs, thyristors, GTOs, pn-diodes, …
  • Low Voltage Power Devices and Power IC Technology:
    Low voltage silicon based discrete power devices (≤ 200V) and power devices for power ICs of all voltage ranges incl. technology
  • Power IC Design:
    Circuit design and demonstration using power IC technology platform
  • GaN and III/V Compound Materials:
    Power devices, technology, materials and processing for GaN, AlN, GaAs, …
  • SiC and other Materials:
    Power devices, technology, materials and processing for SiC, Ga2O3, Diamond, …
  • Module and Package Technologies:
    Module and package technology for discrete power devices and power ICs

Agreement Not to Pre-Publish Abstracts or Present Abstracts

Submission of an abstract for review and subsequent acceptance is considered by the committee as an agreement that the work will not be placed in the public domain by the author prior to the conference. Accepted papers or significant portions of the work may not be placed in the public domain (conference with and without proceedings) prior to the conference. Violation will be grounds for automatic withdrawal of the paper by the conference committee.

General Chair:

Dr. Oliver Häberlen, Infineon Technologies, Email: chair@ispsd2020.com

Technical Program Committee Chair:

Prof. Nando Kaminski, University of Bremen, Email: technicalchair@ispsd2020.com